利用x射线计算机断层摄影技术对硅通孔进行成像

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-06-01 DOI:10.1109/IPFA.2014.6898170

J. Gambino, W. Bowe, D. M. Bronson, S. Adderly

{"title":"利用x射线计算机断层摄影技术对硅通孔进行成像","authors":"J. Gambino, W. Bowe, D. M. Bronson, S. Adderly","doi":"10.1109/IPFA.2014.6898170","DOIUrl":null,"url":null,"abstract":"X-Ray computed tomography (CT) can be useful in evaluating defects in through-silicon vias (TSVs). X-Ray CT images of two different TSV processes are presented; copper TSVs used for stacked memory on logic and tungsten TSVs used for power amplifiers. It is found that TSVs in the edge exclusion region are susceptible to defects from the TSV etch and TSV metallization processes.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Imaging of through-silicon vias using X-Ray computed tomography\",\"authors\":\"J. Gambino, W. Bowe, D. M. Bronson, S. Adderly\",\"doi\":\"10.1109/IPFA.2014.6898170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"X-Ray computed tomography (CT) can be useful in evaluating defects in through-silicon vias (TSVs). X-Ray CT images of two different TSV processes are presented; copper TSVs used for stacked memory on logic and tungsten TSVs used for power amplifiers. It is found that TSVs in the edge exclusion region are susceptible to defects from the TSV etch and TSV metallization processes.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"27 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

x射线计算机断层扫描(CT)可用于评估硅通孔(tsv)中的缺陷。介绍了两种不同的TSV过程的x射线CT图像;用于逻辑上堆叠存储器的铜tsv和用于功率放大器的钨tsv。发现边缘排除区的TSV易受TSV蚀刻和TSV金属化过程的缺陷影响。

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Imaging of through-silicon vias using X-Ray computed tomography

X-Ray computed tomography (CT) can be useful in evaluating defects in through-silicon vias (TSVs). X-Ray CT images of two different TSV processes are presented; copper TSVs used for stacked memory on logic and tungsten TSVs used for power amplifiers. It is found that TSVs in the edge exclusion region are susceptible to defects from the TSV etch and TSV metallization processes.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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