基于双植入n/n/sup +/-发射极自对准工艺的低损耗/高度坚固的igbt发生器

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583694

T. Laska, A. Porst, H. Brunner, W. Kiffe

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引用次数: 22

摘要

提出了一种新的1200 V-IGBT芯片，该芯片具有优化的平面电池结构，可达到最低的导通电压，但仍然保证了非常高的坚固性。这些特性的关键点是一种新的自对准工艺概念，具有双植入亚微米发射极结构，这也将成为低压IGBT (600 V)和高压IGBT (1600 V及更高)的基础。

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A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n/sup +/-emitter

A new 1200 V-IGBT chip is presented which has an optimized planar cell structure for lowest on-state voltage, but that nevertheless guarantees a very high degree of ruggedness. The key point for these features is a new self aligned process concept with a double implanted submicron emitter structure, which will be the basis also for a lower voltage IGBT (600 V) as well as for high voltage IGBTs (1600 V and higher).

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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