N. Fong, J. Plouchart, N. Zamdmer, Duixian Liu, L. Wagner, P. Garry, G. Tarr
{"title":"在0.13 /spl mu/m SOI CMOS中具有9至15%调谐范围的40 GHz压控振荡器","authors":"N. Fong, J. Plouchart, N. Zamdmer, Duixian Liu, L. Wagner, P. Garry, G. Tarr","doi":"10.1109/VLSIC.2002.1015080","DOIUrl":null,"url":null,"abstract":"A 40 GHz fully-monolithic complementary VCO fabricated in IBM 0.13 /spl mu/m partially-depleted SOI CMOS technology is reported. The VCO operates at 1.5 V supply and draws 11.25 mW of power. The measured phase noise at 40 GHz is -109 dBc/Hz at 4 MHz offset from the carrier. At 1.5 V and 2 V V/sub DD/, the tuning range is 9% and 15% respectively, and the output power is -8 dBm and -5 dBm respectively. The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m.","PeriodicalId":162493,"journal":{"name":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"A 40 GHz VCO with 9 to 15% tuning range in 0.13 /spl mu/m SOI CMOS\",\"authors\":\"N. Fong, J. Plouchart, N. Zamdmer, Duixian Liu, L. Wagner, P. Garry, G. Tarr\",\"doi\":\"10.1109/VLSIC.2002.1015080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 40 GHz fully-monolithic complementary VCO fabricated in IBM 0.13 /spl mu/m partially-depleted SOI CMOS technology is reported. The VCO operates at 1.5 V supply and draws 11.25 mW of power. The measured phase noise at 40 GHz is -109 dBc/Hz at 4 MHz offset from the carrier. At 1.5 V and 2 V V/sub DD/, the tuning range is 9% and 15% respectively, and the output power is -8 dBm and -5 dBm respectively. The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m.\",\"PeriodicalId\":162493,\"journal\":{\"name\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2002.1015080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2002.1015080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 40 GHz VCO with 9 to 15% tuning range in 0.13 /spl mu/m SOI CMOS
A 40 GHz fully-monolithic complementary VCO fabricated in IBM 0.13 /spl mu/m partially-depleted SOI CMOS technology is reported. The VCO operates at 1.5 V supply and draws 11.25 mW of power. The measured phase noise at 40 GHz is -109 dBc/Hz at 4 MHz offset from the carrier. At 1.5 V and 2 V V/sub DD/, the tuning range is 9% and 15% respectively, and the output power is -8 dBm and -5 dBm respectively. The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m.