{"title":"统一肖特基-普尔-弗兰克尔理论在高k介电电容器结构中的一些应用实例","authors":"W. Lau, O. Wong, H. Wong","doi":"10.1109/EDSSC.2013.6628085","DOIUrl":null,"url":null,"abstract":"It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures\",\"authors\":\"W. Lau, O. Wong, H. Wong\",\"doi\":\"10.1109/EDSSC.2013.6628085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures
It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors.