{"title":"基于表面化学分析的金硅模结合的几点思考","authors":"C. E. Hoge, Simon Thomas","doi":"10.1109/IRPS.1980.362957","DOIUrl":null,"url":null,"abstract":"Die bond reliability using gold-silicon eutectic preforms was investigated and related to poor wetting of the integrated circuit and substrate by the alloy melt. Using a Scanning Auger Microprobe (SAM), surface and interfacial structures were analyzed and the conditions for bonding or non-bonding outlined.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"218 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Some Considerations of the Gold-Silicon Die Bond Based on Surface Chemical Analysis\",\"authors\":\"C. E. Hoge, Simon Thomas\",\"doi\":\"10.1109/IRPS.1980.362957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Die bond reliability using gold-silicon eutectic preforms was investigated and related to poor wetting of the integrated circuit and substrate by the alloy melt. Using a Scanning Auger Microprobe (SAM), surface and interfacial structures were analyzed and the conditions for bonding or non-bonding outlined.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"218 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Some Considerations of the Gold-Silicon Die Bond Based on Surface Chemical Analysis
Die bond reliability using gold-silicon eutectic preforms was investigated and related to poor wetting of the integrated circuit and substrate by the alloy melt. Using a Scanning Auger Microprobe (SAM), surface and interfacial structures were analyzed and the conditions for bonding or non-bonding outlined.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
