XQE-0920商用现货CMOS光子成像仪微电路的重离子诱导单事件效应表征

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC) Pub Date : 2021-07-01 DOI:10.1109/NSREC45046.2021.9679348

R. Koga, S. Davis, A. Berman, D. Mabry

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引用次数: 0

摘要

我们在XQE-0920 CMOS成像仪微电路上观察到重离子诱导的单事件效应。观察到像素扰动以及伴随高偏置电流的扰动。

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Heavy Ion Induced Single Event Effects Characterization of the XQE-0920 Commercial Off-the-shelf CMOS Photonic Imager Microcircuit

We present observations of heavy ion induced single event effects on the XQE-0920 CMOS imager microcircuit. Pixel upsets as well as upsets accompanying a high level of bias current were observed.

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2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)

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