使用EKV MOSFET模型的标准模拟电路模块的设计方法和使用BSIM3v3 MOSFET模型的验证

Kirmender Singh
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引用次数: 1

摘要

集成电路的设计是一门艺术,设计者通过对电路的多次仿真和对晶体管尺寸的评估来满足增益-带宽乘积、功耗、动态范围、非线性失真等方面的对比目标。设计人员采用多管齐下的方法,首先用解析法对电路进行设计直觉检验,然后在模拟器上对电路进行仿真优化,以满足其规格要求。采用多约束优化算法可以提高电路的性能,但这需要用数学表达式对电路性能进行建模。本文利用在0.18μ技术的BSIM3v3模型的不同桶上提取并优化的EKV2.6模型参数,采用gm/lD比设计方法设计了单级共源放大器、差分放大器和OTA等标准模拟模块。最后利用BSIM3v3 MOSFET模型在HSPICE上进行了验证,匹配率在10%以内。上述工作的功能显示了OTA标准规范设计的完整过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design methodology of standard analog circuit block using EKV MOSFET model and validation using BSIM3v3 MOSFET model
Designing of an IC is an art which a designer masters by its experience of multiple simulation of the circuits and evaluating transistor sizes to meet contrasting objectives of gain-bandwidth product, power consumption, dynamic range non-linear distortion, etc. The designer adopt multi-pronged approach to meet its specification by examining the circuit by design intuition using analytical approach and then further optimizing by simulating circuit on simulator. The performance of the circuit is enhanced using optimization algorithm with multiple constraints but it require the circuit performance be modeled with mathematical expression. In this paper we use EKV2.6 model parameters which is extracted and optimized on different bins of BSIM3v3 model on 0.18μ technology to design standard analog building blocks like single stage common source amplifier, differential amplifier and OTA using gm/lD ratio design methodology. Finally all the design are validated on HSPICE using BSIM3v3 MOSFET model with matching within limit of 10%. This capability of above work shows a complete procedure in the design for a standard specification of OTA.
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