{"title":"两相系统中CMOS C-Element阻挡单电离粒子冲击的研究","authors":"V. Stenin, Yu. V. Katunin, K. A. Petrov","doi":"10.1109/MIEL.2019.8889609","DOIUrl":null,"url":null,"abstract":"The work presents the TCAD simulation of the 65 nm bulk CMOS C-element as resistant to the single-event transients. The charge collection from a track of a single nuclear particle simulates in impacted on drain regions of the transistors, which leads to the error pulses in the output of 2-phase inverters and C-element. The TCAD simulation used the tracks along the normal to the chip. The linear energy transfer from a particle to the track is 60 MeV.cm2/mg.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Blocking of Impacts of Single Ionizing Particles by CMOS C-Element in Two-Phase Systems\",\"authors\":\"V. Stenin, Yu. V. Katunin, K. A. Petrov\",\"doi\":\"10.1109/MIEL.2019.8889609\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work presents the TCAD simulation of the 65 nm bulk CMOS C-element as resistant to the single-event transients. The charge collection from a track of a single nuclear particle simulates in impacted on drain regions of the transistors, which leads to the error pulses in the output of 2-phase inverters and C-element. The TCAD simulation used the tracks along the normal to the chip. The linear energy transfer from a particle to the track is 60 MeV.cm2/mg.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889609\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了65nm块体CMOS c -元件抗单事件瞬变的TCAD仿真。单核粒子轨迹的电荷收集模拟在晶体管漏极区域的冲击,从而导致两相逆变器和c -元件输出的误差脉冲。TCAD仿真采用沿芯片法线的轨迹。从粒子到轨道的线性能量传递是60mev .cm2/mg。
Blocking of Impacts of Single Ionizing Particles by CMOS C-Element in Two-Phase Systems
The work presents the TCAD simulation of the 65 nm bulk CMOS C-element as resistant to the single-event transients. The charge collection from a track of a single nuclear particle simulates in impacted on drain regions of the transistors, which leads to the error pulses in the output of 2-phase inverters and C-element. The TCAD simulation used the tracks along the normal to the chip. The linear energy transfer from a particle to the track is 60 MeV.cm2/mg.