集成植入电极阵列和放大器设计的单片机无线神经记录

H. Shan, N. Conrad, S. Ghotbi, J. Peterson, S. Mohammadi
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引用次数: 1

摘要

将一个四通道微电极阵列(MEA)和一个低噪声放大器集成在一个标准的CMOS工艺中,作为单芯片无线神经记录和刺激系统的一部分。对该设计进行了活体神经元动作电位和局部场电位的采集实验。神经放大器采用电容反馈结构,避免了直流基线漂移。采用GlobalFoundries的45RFSOI CMOS技术制造并后处理形成集成的MEA,测量的神经探头输出阻抗在$3.5\ \mathrm{k}\Omega$至$250\ \mathrm{k}\Omega$之间,跨越20 Hz至102 kHz,相移在- 70°至- 10°之间。该放大器可在1hz至10khz范围内实现35db电压增益,其输入参考噪声在10hz至10khz带宽范围内为$4.9\ \mu \mathrm{Vrms}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated Implantable Electrode Array and Amplifier Design for Single-chip Wireless Neural Recordings
A four-channel micro-electrode array (MEA) and a low noise amplifier are integrated in a standard CMOS process as part of a single-chip wireless neural recording and stimulation system. The design is tested for acquiring action potential and local field potential of live neurons. The neural amplifier uses capacitive feedback structure to avoid dc baseline drifting. Fabricated using GlobalFoundries' 45RFSOI CMOS technology and post-processed to form the integrated MEA, measured neural probe output impedance is between $3.5\ \mathrm{k}\Omega$ to $250\ \mathrm{k}\Omega$ across 20 Hz to 102 kHz with phase shift between −70° to −10°. The amplifier can achieve 35 dB voltage gain across 1 Hz to 10 kHz, and its input referred noise is $4.9\ \mu \mathrm{Vrms}$ over 10 Hz to 10 kHz bandwidth.
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