UHF-1:在SOI上的高速互补双极模拟过程

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274037

C. Davis, G. Bajor, J. Butler, T. Crandell, J. Delgado, T. Jung, Y. Khajeh-Noori, B. Lomenick, V. Milam, H. Nicolay, S. Richmond, T. Rivoli

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引用次数: 34

摘要

一种互补硅双极工艺已开发用于高性能模拟应用。该工艺采用高频PNP和NPN晶体管，过渡频率分别高于5 GHz和9 GHz。该晶体管具有双多晶硅自对准结构，采用键合硅片绝缘体上硅(SOI)技术和垂直沟槽进行隔离。电路元件通过两层金属化互连。UHF-1工艺已被用于制造几个先进的单片模拟高频集成电路。

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UHF-1: a high speed complementary bipolar analog process on SOI

A complementary silicon bipolar process has been developed for high-performance analog applications. The process features high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz, respectively. The transistors have a double polysilicon, self-aligned structure which is isolated by using bonded wafer silicon-on-insulator (SOI) technology and vertical trenches. The circuit components are interconnected with two levels of metallization. The UHF-1 process has been used to create several advanced analog high-frequency integrated circuits in a monolithic form.<>

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Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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