0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT生产工艺，用于高性能、高产量v波段功率mmic

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-31 DOI:10.1109/GAAS.1995.528972

R. Lai, M. Biedenbender, J. Lee, K. Tan, D. Streit, P. Liu, M. Hoppe, B. Allen

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引用次数: 20

摘要

我们提出了一种独特的高产量，高性能0.15 /spl mu/m HEMT生产工艺，支持制造高达70 GHz的毫米波功率mmic。该工艺已成功从研发过程转移到天合的砷化镓生产线。本文报道了在24片晶圆上测量的1300多个v波段MMIC - PA电路的片上测试结果。最好的2级v波段功率mmic具有最先进的性能，功率增益为9 dB, PAE为20%，输出功率为330 mW。在8 dB的功率增益和250 mW的输出功率规格下，实现了60%的RF良率。

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0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs

We present a unique high yield, high performance 0.15 /spl mu/m HEMT production process which supports fabrication of MMW power MMICs up to 70 GHz. This process has been transferred successfully from an R&D process to TRW's GaAs production line. This paper reports the on-wafer test results of more than 1300 V-band MMIC PA circuits measured over 24 wafers. The best 2-stage V-band power MMICs have demonstrated state-of-the-art performance with 9 dB power gain, 20% PAE and 330 mW output power. An excellent RF yield of 60% was achieved with an 8 dB power gain and 250 mW output power specification.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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