GaAsP纳米线在GaAs上生长过程中P在纳米线和层中的不均匀分布

COMMAD 2012 Pub Date : 1900-01-01 DOI:10.1109/COMMAD.2012.6472403

W. Sun, Y. Guo, H. Y. Xu, Z. Liao, J. Zou, Q. Gao, H. Tan, C. Jagadish

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引用次数: 0

摘要

在GaAs(001)衬底上生长GaAsP纳米线时，发现纳米线和无意二维(2D) GaAsP层中的P浓度不同。给出了可能的解释。

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Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

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来源期刊

COMMAD 2012

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