具有晶粒取向的Bi/sub 4/Ti/sub 3/O/sub 12基无铅压电陶瓷

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195929

H. Nagata, Y. Fujita, H. Enosawa, T. Takenaka

{"title":"具有晶粒取向的Bi/sub 4/Ti/sub 3/O/sub 12基无铅压电陶瓷","authors":"H. Nagata, Y. Fujita, H. Enosawa, T. Takenaka","doi":"10.1109/ISAF.2002.1195929","DOIUrl":null,"url":null,"abstract":"Piezoelectric properties of Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITN-x] and B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k/sub 33/ of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k/sub 33/ values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bi/sub 4/Ti/sub 3/O/sub 12/-based lead-free piezoelectric ceramics with grain orientation\",\"authors\":\"H. Nagata, Y. Fujita, H. Enosawa, T. Takenaka\",\"doi\":\"10.1109/ISAF.2002.1195929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Piezoelectric properties of Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITN-x] and B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k/sub 33/ of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k/sub 33/ values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195929\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITV-x]和B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x]陶瓷的压电性能。此外，采用热锻(HF)方法研究了BITN和BITV陶瓷的晶粒取向对压电性能的影响。随着掺杂量的增加，BITV陶瓷的最佳烧结温度逐渐降低。在随机取向的普通烧成(OF)样品上，BITN-0.08和BITV-0.02陶瓷的机电耦合系数k/sub 33/分别提高了0.20和0.25。在HF样品上，BITN-0.08和BITV-0.04陶瓷的k/sub 33/值分别提高了0.39和0.38。

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Bi/sub 4/Ti/sub 3/O/sub 12/-based lead-free piezoelectric ceramics with grain orientation

Piezoelectric properties of Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITN-x] and B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k/sub 33/ of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k/sub 33/ values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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