基于并联电流开关锁存电路的40gb /s全速率4:1多路复用器的低电源电压工作

Y. Amamiya, Y. Suzuki, Y. Yamazaki, M. Mamada, H. Hida
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引用次数: 0

摘要

我们使用InP-HBT技术在全速率4:1多路复用器中实现了新的电路拓扑,即并联电流开关锁存器。这是该技术的首次报道,该技术在1.8 V电源电压下实现了40gb /s的无错误运行,功耗仅为1w。该电压与高速CMOS I/O电路的电压一样低。该电路拓扑能够在低至1.3 V的电源电压下(使用需要相对较大电源电压的双极器件)具有大时钟相位裕度(>200度)的高速(>40 Gb/s)选择器操作。采用该电路技术的D-F/F在1.8 v电源电压下的数据速率高达110 Gb/s,也证实了解复用操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low supply voltage operation of 40-Gb/s full-rate 4:1 multiplexer based on parallel-current-switching latch circuitry
We implemented new circuit topology, a parallel-current-switching latch, in a full-rate 4:1 multiplexer using InP-HBT technology. This is the first report of this technology, which resulted in 40-Gb/s error-free operation with a power dissipation of only 1 W at a supply voltage of 1.8 V. This voltage is as low as that of high-speed CMOS I/O circuits. This circuit topology is capable of high-speed (>40 Gb/s) selector operation with a large clock phase margin (>200 deg) at a supply voltage as low as 1.3 V using bipolar-based devices that require a relatively large supply voltage. Demultiplexing operation was also confirmed for the D-F/F with this circuit technology at a data rate of up to 110 Gb/s with a 1.8-V supply voltage.
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