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微扰理论在强磁场作用下单晶锗薄膜空穴谱计算中的应用准则

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI:10.1109/EDM.2015.7184486
N. Z. Altynbekov, Y. Ososkov, A. Moiseev
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引用次数: 0

摘要

给出了微扰理论应用于强磁场作用下单晶锗薄膜空穴谱计算的判据。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Criterion for perturbation theory application in calculation of holes spectrum in thin monocrystalline germanium film subject to strong magnetic field
Criterion for perturbation theory application in calculation of holes spectrum in thin monocrystalline germanium film subject to strong magnetic field is formulated.
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来源期刊
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices
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