深亚微米的设计-制造界面:技术独立设计已死吗?

C. Guardiani, A. Strojwas
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引用次数: 3

摘要

不久前,独立于技术的设计风格被宣传为未来的发展方向,至少对于asic来说是这样。RTL代码无缝映射到预表征的IP库和自动P&R似乎提供了从HDL到掩码布局的平滑路径。不幸的是,这种方法在深亚微米(DSM)时代似乎并不可行,特别是对于高性能集成电路。为了实现最佳性能,同时保持令人满意的制造成品率,必须提取和抽象技术能力,包括互连中的准传输线效应,以便在设计综合中预先使用。设计-制造界面必须改变,以便考虑到这些DSM影响,同时仍然能够处理日益复杂的设计。该小组将通过聚集来自半导体行业不同领域的专家来解决对DSM技术的设计制造界面的要求,以解决设计需求与现有解决方案以及为前沿技术设计高复杂性芯片的潜在阻碍因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design-Manufacturing Interface in the Deep Submicron: Is Technology Independent Design Dead?
Not so long ago, the technology independent design style was advertised as the way to go, at least for ASICs. Seamless mapping of RTL code onto pre-characterized IP libraries and automatic P&R seemed to provide a smooth path from HDL to mask layout. Unfortunately, this approach does not appear to be feasible in the deep submicron (DSM) era, especially for high performance IC's.To achieve top performance while maintaining satisfactory manufacturing yields, the technology capabilities, including quasi-transmission line effects in interconnections, must be extracted and abstracted to be used up-front in the design synthesis. The design-manufacturing interface must be changed in order to account for these DSM effects, while still being able to handle the increasing complexity of designs.This panel will address the requirements imposed on the design - manufacturing interface for the DSM technologies by gathering experts from the different segments of the semiconductor industry, to address design needs versus available solutions and potential show-stoppers in designing high complexity chips for leading edge technologies.
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