{"title":"低相位噪声HEMT微波压控振荡器","authors":"V. Ulansky","doi":"10.1109/MRRS.2011.6053600","DOIUrl":null,"url":null,"abstract":"This paper presents a novel negative differential resistance (NDR) voltage-controlled oscillator (VCO) for microwave applications. The VCO circuit comprises a high electron mobility field-effect transistor (HEMT) and a p-channel metal-oxide-semiconductor transistor (PMOST) current mirror (CM). The mathematical model of the proposed VCO is developed. The designed VCO uses a pseudomorphic HEMT NE3210S01 and four 0.18μm PMOSTs. The implemented 275.87MHz oscillator draws 4.2 mA from a 3.3 V power supply and generates low-noise low-distortion signal.","PeriodicalId":424165,"journal":{"name":"2011 MICROWAVES, RADAR AND REMOTE SENSING SYMPOSIUM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Low phase-noise HEMT microwave voltage-controlled oscillator\",\"authors\":\"V. Ulansky\",\"doi\":\"10.1109/MRRS.2011.6053600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel negative differential resistance (NDR) voltage-controlled oscillator (VCO) for microwave applications. The VCO circuit comprises a high electron mobility field-effect transistor (HEMT) and a p-channel metal-oxide-semiconductor transistor (PMOST) current mirror (CM). The mathematical model of the proposed VCO is developed. The designed VCO uses a pseudomorphic HEMT NE3210S01 and four 0.18μm PMOSTs. The implemented 275.87MHz oscillator draws 4.2 mA from a 3.3 V power supply and generates low-noise low-distortion signal.\",\"PeriodicalId\":424165,\"journal\":{\"name\":\"2011 MICROWAVES, RADAR AND REMOTE SENSING SYMPOSIUM\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 MICROWAVES, RADAR AND REMOTE SENSING SYMPOSIUM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MRRS.2011.6053600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 MICROWAVES, RADAR AND REMOTE SENSING SYMPOSIUM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MRRS.2011.6053600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a novel negative differential resistance (NDR) voltage-controlled oscillator (VCO) for microwave applications. The VCO circuit comprises a high electron mobility field-effect transistor (HEMT) and a p-channel metal-oxide-semiconductor transistor (PMOST) current mirror (CM). The mathematical model of the proposed VCO is developed. The designed VCO uses a pseudomorphic HEMT NE3210S01 and four 0.18μm PMOSTs. The implemented 275.87MHz oscillator draws 4.2 mA from a 3.3 V power supply and generates low-noise low-distortion signal.
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