{"title":"采用发射率主导电子束的线性光束器件的设计考虑","authors":"D. Whaley","doi":"10.1109/IVEC.2013.6571010","DOIUrl":null,"url":null,"abstract":"As the frequency of linear beam RF device operation increases, the effect of beam emittance starts to play a more crucial role in the design of real world devices. Several issues related to TWT design in particular have been addressed for devices employing field emitter cathodes through W-Band frequencies. The general formulation is also applicable to emittance dominated thermionic beams operating in the submillimeter and THz regimes.","PeriodicalId":283300,"journal":{"name":"2013 IEEE 14th International Vacuum Electronics Conference (IVEC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design considerations for linear beam devices employing emittance dominated electron beams\",\"authors\":\"D. Whaley\",\"doi\":\"10.1109/IVEC.2013.6571010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As the frequency of linear beam RF device operation increases, the effect of beam emittance starts to play a more crucial role in the design of real world devices. Several issues related to TWT design in particular have been addressed for devices employing field emitter cathodes through W-Band frequencies. The general formulation is also applicable to emittance dominated thermionic beams operating in the submillimeter and THz regimes.\",\"PeriodicalId\":283300,\"journal\":{\"name\":\"2013 IEEE 14th International Vacuum Electronics Conference (IVEC)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 14th International Vacuum Electronics Conference (IVEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVEC.2013.6571010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 14th International Vacuum Electronics Conference (IVEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2013.6571010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design considerations for linear beam devices employing emittance dominated electron beams
As the frequency of linear beam RF device operation increases, the effect of beam emittance starts to play a more crucial role in the design of real world devices. Several issues related to TWT design in particular have been addressed for devices employing field emitter cathodes through W-Band frequencies. The general formulation is also applicable to emittance dominated thermionic beams operating in the submillimeter and THz regimes.