三维集成电路堆叠中垂直互连射频衬底耦合效应的表征与建模

2010 IEEE 14th Workshop on Signal Propagation on Interconnects Pub Date : 2010-05-09 DOI:10.1109/SPI.2010.5483585

E. Eid, T. Lacrevaz, C. Bermond, S. de Rivaz, S. Capraro, J. Roullard, L. Cadix, B. Fléchet, A. Farcy, P. Ancey, F. Calmon, O. Valorge, P. Leduc

{"title":"三维集成电路堆叠中垂直互连射频衬底耦合效应的表征与建模","authors":"E. Eid, T. Lacrevaz, C. Bermond, S. de Rivaz, S. Capraro, J. Roullard, L. Cadix, B. Fléchet, A. Farcy, P. Ancey, F. Calmon, O. Valorge, P. Leduc","doi":"10.1109/SPI.2010.5483585","DOIUrl":null,"url":null,"abstract":"This paper discusses substrate coupling effects in 3D integrated circuits carried by TSV interconnects (Through Silicon Vias). These electrical couplings lead to several impacts on 3D circuit performance. RF (Radio Frequency) characterizations have been performed on dedicated test structures in order to extract electrical models of substrate coupling and make obvious this phenomenon. New modeling tools for predictive studies have been validated thanks to a good compatibility between RF measurements and RF models.","PeriodicalId":293987,"journal":{"name":"2010 IEEE 14th Workshop on Signal Propagation on Interconnects","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Characterization and modeling of RF substrate coupling effects due to vertical interconnects in 3D integrated circuit stacking\",\"authors\":\"E. Eid, T. Lacrevaz, C. Bermond, S. de Rivaz, S. Capraro, J. Roullard, L. Cadix, B. Fléchet, A. Farcy, P. Ancey, F. Calmon, O. Valorge, P. Leduc\",\"doi\":\"10.1109/SPI.2010.5483585\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses substrate coupling effects in 3D integrated circuits carried by TSV interconnects (Through Silicon Vias). These electrical couplings lead to several impacts on 3D circuit performance. RF (Radio Frequency) characterizations have been performed on dedicated test structures in order to extract electrical models of substrate coupling and make obvious this phenomenon. New modeling tools for predictive studies have been validated thanks to a good compatibility between RF measurements and RF models.\",\"PeriodicalId\":293987,\"journal\":{\"name\":\"2010 IEEE 14th Workshop on Signal Propagation on Interconnects\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE 14th Workshop on Signal Propagation on Interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI.2010.5483585\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE 14th Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2010.5483585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文讨论了由TSV互连(通过硅孔)承载的三维集成电路中的衬底耦合效应。这些电耦合会对3D电路性能产生一些影响。在专用的测试结构上进行了射频表征，以提取衬底耦合的电模型，并使这种现象变得明显。由于射频测量和射频模型之间的良好兼容性，用于预测研究的新建模工具已得到验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization and modeling of RF substrate coupling effects due to vertical interconnects in 3D integrated circuit stacking

This paper discusses substrate coupling effects in 3D integrated circuits carried by TSV interconnects (Through Silicon Vias). These electrical couplings lead to several impacts on 3D circuit performance. RF (Radio Frequency) characterizations have been performed on dedicated test structures in order to extract electrical models of substrate coupling and make obvious this phenomenon. New modeling tools for predictive studies have been validated thanks to a good compatibility between RF measurements and RF models.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE 14th Workshop on Signal Propagation on Interconnects

自引率

0.00%

发文量