集成1.8V至3.3V稳压倍频器，采用有源二极管和双环电压跟随器，用于开关电容负载

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705324

Yat-Hei Lam, W. Ki, C. Tsui

{"title":"集成1.8V至3.3V稳压倍频器，采用有源二极管和双环电压跟随器，用于开关电容负载","authors":"Yat-Hei Lam, W. Ki, C. Tsui","doi":"10.1109/VLSIC.2006.1705324","DOIUrl":null,"url":null,"abstract":"An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm2","PeriodicalId":366835,"journal":{"name":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","volume":"24 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"An Integrated 1.8V to 3.3V Regulated Voltage Doubler Using Active Diodes and Dual-Loop Voltage Follower for Switch-Capacitive Load\",\"authors\":\"Yat-Hei Lam, W. Ki, C. Tsui\",\"doi\":\"10.1109/VLSIC.2006.1705324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm2\",\"PeriodicalId\":366835,\"journal\":{\"name\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"volume\":\"24 8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2006.1705324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2006.1705324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

介绍了一种集成1.8V至3.3V稳压倍频器。仅采用MOS晶体管实现有源二极管来防止反向电荷转移。开关低压差稳压器由一个双回路电压跟随器组成，可以驱动一个大的开关容性负载，在140mA电流阶跃下实现小于5mus的快速负载瞬态。该调节倍频器采用0.35 μ m CMOS工艺制造，占用0.74mm2的面积

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An Integrated 1.8V to 3.3V Regulated Voltage Doubler Using Active Diodes and Dual-Loop Voltage Follower for Switch-Capacitive Load

An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm2

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

自引率

0.00%

发文量