基于闪存的抗辐射FPGA-RTG4波束内编程

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696174

Jih-Jong Wang, N. Rezzak, Stephen Varela, V. Nguyen, S. Samiee, F. Hawley, E. Hamdy

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引用次数: 1

摘要

研究了第一种基于flash的抗辐射FPGA-RTG4的波束内编程。通过市售FlashPro进行编程，在垂直重离子照射下进行，LET范围为1.2至30.5 MeV-cm2/mg。在束流试验中，虽然在人为高通量的情况下编程会出现中断，但所得的威布尔曲线预测了空间编程的很高成功率。中断的原因被TPA激光扫描识别为行和列寄存器的单事件中断，这些寄存器设置要配置的单元。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-Beam Programming of Radiation-Hardened Flash-Based FPGA—RTG4

In-beam programming of the first radiation-hardened Flash-based FPGA—RTG4 is investigated. Programming by commercially available FlashPro is performed under perpendicular heavy-ion irradiation with LET ranging from 1.2 to 30.5 MeV-cm2/mg. Although there are interruptions during programming with artificially high flux in beam test, the acquired Weibull curve predicts very high successful rate of programming in space. The cause of interruptions is identified by TPA laser scanning to be single event upsets of row and column registers which setup the cells to be configured.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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