沟槽垂直DMOS (VDMOS)功率晶体管的单片集成成BCD工艺

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487947

T. Dyer, J. McGinty, A. Strachan, C. Bulucea

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引用次数: 14

摘要

本文首次报道了将沟槽垂直DMOS (VDMOS) n沟道晶体管单片集成到集成电路BCD工艺中。讨论了沟槽式VDMOS模块的集成方案，并与TCAD仿真结果进行了比较。对于50v器件，与平面器件相比，集成沟槽器件可提供至少两倍的R/sub / DS(ON)/ /spl时间/面积优势。使用最小特征尺寸为1 /spl mu/m的集成沟槽VDMOS, R/sub DS(ON)/ /spl times/ area值为80 m/spl Omega/mm/sup 2/。

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Monolithic integration of trench vertical DMOS (VDMOS) power transistors into a BCD process

The monolithic integration of trench vertical DMOS (VDMOS) n-channel transistors into an IC BCD process is reported for the first time. The integration scheme for the trench VDMOS module is discussed and silicon results are compared with TCAD simulations. For a 50-V device, the integrated trench device is shown to offer at least a factor-of-two R/sub DS(ON)/ /spl times/ area advantage over its planar counterpart. An R/sub DS(ON)/ /spl times/ area value of 80 m/spl Omega/mm/sup 2/ is achieved for the integrated trench VDMOS using a minimum feature size of 1 /spl mu/m.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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