Comparison of plasma-induced charging damage in bulk and SOI MOSFETs

Plasma-induced charging damage was examined on both bulk and SOI n-MOSFETs using time-zero dielectric breakdown measurements. It was found that the TZDB distributions for the SOI devices were less dependent on antenna ratio and less susceptible to antenna charging damage than bulk silicon devices. The dramatically different behavior for SOI implies that the antenna design rule requirements for bulk and SOI MOSFETs will not be the same. Finally, it is noted that antenna damage effects in SOI devices may depend on the size of the silicon island relative to the length scale of the plasma non-uniformity.