1Mb DRAM替代品

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156684

W. Rosenweig, H. Kirsch

{"title":"1Mb DRAM替代品","authors":"W. Rosenweig, H. Kirsch","doi":"10.1109/ISSCC.1984.1156684","DOIUrl":null,"url":null,"abstract":"Since 1970, DRAMs have grown from 1K to 256K. They have been the technology leaders which helped push design rules from 10μm down to under 2μm. Since the 4K generation, the leaders have been the address multiplexed ×1 DRAMs in 16Pin, 300mil DIPs. The power supply has become a standard 5V... There are many possibilities at the 1M level. The x4 or x8 organizations preferred by small system designers may begin to dominate the market. Video RAMs and other smart memories may become much more pervasive. New packing alternatives may prove to be the most effective. The 5V power supply may no longer be viable. New technological innovations may be needed to provide the required packing densities, while retaining adequate margins and levels of reliability. New procedures may be needed to test such large memories.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1Mb DRAM alternatives\",\"authors\":\"W. Rosenweig, H. Kirsch\",\"doi\":\"10.1109/ISSCC.1984.1156684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since 1970, DRAMs have grown from 1K to 256K. They have been the technology leaders which helped push design rules from 10μm down to under 2μm. Since the 4K generation, the leaders have been the address multiplexed ×1 DRAMs in 16Pin, 300mil DIPs. The power supply has become a standard 5V... There are many possibilities at the 1M level. The x4 or x8 organizations preferred by small system designers may begin to dominate the market. Video RAMs and other smart memories may become much more pervasive. New packing alternatives may prove to be the most effective. The 5V power supply may no longer be viable. New technological innovations may be needed to provide the required packing densities, while retaining adequate margins and levels of reliability. New procedures may be needed to test such large memories.\",\"PeriodicalId\":260117,\"journal\":{\"name\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1984.1156684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

自1970年以来，dram从1K增长到256K。他们一直是将设计规则从10μm降低到2μm以下的技术领导者。自4K一代以来，领导者一直是16引脚，300mil dip的地址复用×1 dram。电源已成为标准的5V…在1M的层面上有很多可能性。小型系统设计人员偏爱的x4或x8组织可能开始主导市场。视频ram和其他智能存储器可能会变得更加普遍。新的包装替代品可能被证明是最有效的。5V电源可能不再可行。可能需要新的技术创新来提供所需的包装密度，同时保持足够的余量和可靠性水平。可能需要新的程序来测试如此大的内存。

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1Mb DRAM alternatives

Since 1970, DRAMs have grown from 1K to 256K. They have been the technology leaders which helped push design rules from 10μm down to under 2μm. Since the 4K generation, the leaders have been the address multiplexed ×1 DRAMs in 16Pin, 300mil DIPs. The power supply has become a standard 5V... There are many possibilities at the 1M level. The x4 or x8 organizations preferred by small system designers may begin to dominate the market. Video RAMs and other smart memories may become much more pervasive. New packing alternatives may prove to be the most effective. The 5V power supply may no longer be viable. New technological innovations may be needed to provide the required packing densities, while retaining adequate margins and levels of reliability. New procedures may be needed to test such large memories.

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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