{"title":"FEA场电子发射的不稳定性","authors":"Haibo Song, Qiong Li, Jingfang Xu, Xinfu Liu","doi":"10.1109/ICSICT.1995.503329","DOIUrl":null,"url":null,"abstract":"The instability of silicon field emitter arrays (FEA) has been studied by measuring their current-voltage features. The morphology at the tip of emitter is decided by the equilibrium between the surface tension and electrostatic stress. The contaminant at the emitter surface plays a significant role in breaking the equilibrium between these two stresses, hence makes the micro-emitters grow quickly and initiates a catastrophic cathode vacuum arc.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Instability of field electron emission from FEA\",\"authors\":\"Haibo Song, Qiong Li, Jingfang Xu, Xinfu Liu\",\"doi\":\"10.1109/ICSICT.1995.503329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The instability of silicon field emitter arrays (FEA) has been studied by measuring their current-voltage features. The morphology at the tip of emitter is decided by the equilibrium between the surface tension and electrostatic stress. The contaminant at the emitter surface plays a significant role in breaking the equilibrium between these two stresses, hence makes the micro-emitters grow quickly and initiates a catastrophic cathode vacuum arc.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The instability of silicon field emitter arrays (FEA) has been studied by measuring their current-voltage features. The morphology at the tip of emitter is decided by the equilibrium between the surface tension and electrostatic stress. The contaminant at the emitter surface plays a significant role in breaking the equilibrium between these two stresses, hence makes the micro-emitters grow quickly and initiates a catastrophic cathode vacuum arc.
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