混合asic互连阵列的激光个性化

1993 Proceedings Fifth Annual IEEE International Conference on Wafer Scale Integration Pub Date : 1993-01-20 DOI:10.1109/ICWSI.1993.255245

M. Burnus, H. Taddiken, H.-D. Hartmann, T. Hillmann-Ruge

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引用次数: 2

摘要

用于晶圆级集成(WSI)的可配置互连阵列构成了基于硅的薄膜多芯片模块(mcm)的应用。激光形成的垂直链接允许缩短周期时间，并将冗余引入MCSi(硅上多芯片)技术。由于个性化是在完成晶圆加工后进行的，因此不需要单独的工艺步骤就可以实现大批量生产。为标准的CMOS双能级金属化开发的激光工艺参数适用于双能级夹层金属化。在电流高达150毫安的情况下进行老化测量。发现激光触点适用于不同标准的双能级金属化和互连阵列的配置。

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Laser personalization of interconnection arrays for hybrid ASICs

Configurable interconnection arrays for wafer scale integration (WSI) constitute an application for thin-film multichip modules (MCMs) based on silicon. Laser-formed vertical links allow short cycle times and introduce redundancy into the MCSi (multichip on silicon) technique. As personalization is performed after complete wafer processing, large-volume manufacturing without individual process steps is possible. Laser process parameters developed for a standard CMOS double-level metallization are adapted to a double-level sandwich metallization. Burn-in measurements are carried out with currents up to 150 mA. Laser contacts are found to be suitable for different standard double-level metallizations and for configuration of interconnection arrays.<>

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1993 Proceedings Fifth Annual IEEE International Conference on Wafer Scale Integration

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