厚膜电阻器与氧化铝基板的相互作用

Proceedings of Japan International Electronic Manufacturing Technology Symposium Pub Date : 1993-06-09 DOI:10.1109/IEMT.1993.639342

H. Moriwaki, A. Suzuki, Y. Watanabe, M. Ishiwata, T. Kamata, K. Adachi

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引用次数: 5

摘要

利用不同的微显微镜方法，深入研究了钌基厚膜电阻器(TFR)浆料与氧化铝衬底烧制时的相互作用。在TFRs的底层中发现了TFRs和氧化铝的玻璃质含量、无ru玻璃层的形成和偶有结晶相。晶相为斜长石(Ca,Pb)Si2Als0家族的变异。结果表明，玻璃层的生长速率受扩散过程的控制，反应对TFR各种性能的影响是显著的。除了相互扩散之间

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Interactions Between Thick Film Resistors And Alumina Substrate

Interactions upon firing of Ru-based thick film resistor(TFR) pastes with alumina substrate have been investigated intensively using various m icroana I yt i ca I means. vitreous contents of TFRs and alumina, formations of Ru-free glass layer and occasional crystalline phase have been disclosed in the bot tom layer of TFRs. The crystalline phase has been identified to be the variation within the plagioclase (Ca,Pb)Si2Als0, family. Growth rate o f the glass layer is shown to be controlled by a diffusional process, and the effects of the reactions on various TFR properties are signified. In addition to the mutual diffusion between

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Proceedings of Japan International Electronic Manufacturing Technology Symposium

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