{"title":"快速热脱氧氮化薄栅氧化物mosfet对热载流子致晕的耐久性","authors":"A. Joshi, D. Kwong","doi":"10.1109/DRC.1991.664710","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least Delta I/sub d/ for low V/sub d/ (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least Delta I/sub d/ under low V/sub d/. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl\",\"authors\":\"A. Joshi, D. Kwong\",\"doi\":\"10.1109/DRC.1991.664710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least Delta I/sub d/ for low V/sub d/ (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least Delta I/sub d/ under low V/sub d/. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl
Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least Delta I/sub d/ for low V/sub d/ (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least Delta I/sub d/ under low V/sub d/. >
![[1991] 49th Annual Device Research Conference Digest](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
