带有非线性DAC和波校正ROM的6GHz直接数字合成器MMIC

Danyu Wu, Gaopeng Chen, Jianwu Chen, Xinyu Liu, Li-Xin Zhao, Zhi Jin
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引用次数: 10

摘要

本文提出了一种结合非线性DAC和WCR (Wave-Correction-ROM)的DDS结构,该结构具有较高的运算速度和精度。在此基础上,采用60GHz GaAs HBT技术设计并制作了6GHz 8位DDS MMIC。DDS MMIC包括8位管道累加器,8×8×3bits WCR,两个组合dac和模拟吉尔伯特单元,用于产生8位振幅分辨率的正弦波。在片上测量系统中对DDS芯片进行了测试。测量的无杂散动态范围(SFDR)为33.96dBc,在6GHz最大时钟(FCW=0×65)下输出为2.367GHz。在5GHz时钟频率下,整个Nyquist频段的平均SFDR为37.5dBc,最坏情况下SFDR为31.4dBc (FCW=0×70)。整个芯片的面积为2.4×2mm2,单电源为−4.6 v,功耗为3.27W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 6GHz direct digital synthesizer MMIC with nonlinear DAC and wave correction ROM
This paper proposes a new DDS architecture combined with Nonlinear DAC and Wave-Correction-ROM (WCR) which shows both high operating speed and accuracy. Based on this architecture, a 6GHz 8-bit DDS MMIC is designed and fabricated in 60GHz GaAs HBT Technology. The DDS MMIC includes 8-bit pipeline accumulator, an 8×8×3bits WCR, two combined DACs and an analog Gilbert Cell for sine-wave generation with 8-bit amplitude resolution. The DDS chip is tested in on-wafer measurement system. The measured spurious free dynamic range (SFDR) is 33.96dBc with 2.367GHz output under a 6GHz maximum clock (FCW=0×65). It shows an average SFDR of 37.5dBc and the worst case SFDR of 31.4dBc (FCW=0×70) within the whole Nyquist band under a 5GHz clock frequency. The whole chip occupies 2.4×2mm2 of area consuming 3.27W of power from a single −4.6Vpower supply.
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