一类多层陶瓷电容器(mlcc)在硬开关应用中作为宽带隙(WBG)缓冲器的性能

Allen Templeton, Nathan Reed, Hunter Hayes, James Davis, J. Bultitude
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引用次数: 0

摘要

人们越来越关注将缓冲电容器封装在靠近宽带隙(WBG)器件开关的位置,以提高性能,最终成为最有效的封装在电源模块内。在宽带隙(WBG)器件使用的高开关频率下,多层陶瓷电容器(mlcc)的dV/dt性能在文献中没有很好的记录。本文研究了高dV/dt脉冲在低电容、高额定电压mlcc (> ~ 500vdc)中作为WBG器件开关电池缓冲器所产生的内部电流应力。在双脉冲测试装置中,对快速开关过程中观察到的dV/dt瞬变> 50 V/nS,计算了电极电流密度>2 ×109 A/m2。ANSYS®Maxwell®EM模型提供了对这些激励的内部MLCC电场和电流密度的深入了解。后应力测量表明,这些mlcc没有退化。这项研究将有助于为不同客户缓冲应用的电容器选择提供指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Class I Multi-Layer Ceramic Capacitors (MLCCs) Performance as Wide Band Gap (WBG) Snubbers in Hard Switching Applications
There is increased interest in packaging snubber capacitors close to Wide Band Gap (WBG) device switches to improve performance, ultimately being most effective packaged inside power modules. The performance of Multi-Layer Ceramics Capacitors (MLCCs) at the higher switching frequencies used by Wide Band Gap (WBG) devices are not well documented in the literature with respect to dV/dt capability. In this work the internal current stresses induced by high dV/dt pulses in low capacitance, high voltage rated MLCCs (> 500 VDC) used as snubbers in WBG device switching cells was studied. Electrode current densities > 2 ×109 A/m2 were calculated for dV/dt transients > 50 V/nS observed during fast switching with a double pulse test setup. ANSYS® Maxwell® EM Models provide insight into internal MLCC electric fields and current density for these excitations. Post stress measurements show these MLCCs are not degraded. This study will help provide guidance on capacitor selection for different customer snubber applications.
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