芯片电网谐振引起的供电信号波动——一个新的可靠性问题

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4559006

M. Gurfinkel, P. Livshits, A. Rozen, Y. Fefer, J. Bernstein, Y. Shapira

{"title":"芯片电网谐振引起的供电信号波动——一个新的可靠性问题","authors":"M. Gurfinkel, P. Livshits, A. Rozen, Y. Fefer, J. Bernstein, Y. Shapira","doi":"10.1109/RELPHY.2008.4559006","DOIUrl":null,"url":null,"abstract":"On-die measurements of VDD and VSS signals inside a 90 nm technology chip are presented. The results show fluctuations in the VDD and VSS signals, which might constitute an important new reliability concern. These fluctuations also indirectly affect other reliability mechanisms, such as NBTI, HCI and TDDB. Simulations predict aggravation of this phenomenon for future technologies, which may prove to be a show stopper for further scaling.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Supply signal fluctuations due to chip power grid resonance — a new reliability concern\",\"authors\":\"M. Gurfinkel, P. Livshits, A. Rozen, Y. Fefer, J. Bernstein, Y. Shapira\",\"doi\":\"10.1109/RELPHY.2008.4559006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"On-die measurements of VDD and VSS signals inside a 90 nm technology chip are presented. The results show fluctuations in the VDD and VSS signals, which might constitute an important new reliability concern. These fluctuations also indirectly affect other reliability mechanisms, such as NBTI, HCI and TDDB. Simulations predict aggravation of this phenomenon for future technologies, which may prove to be a show stopper for further scaling.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4559006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4559006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

介绍了在90nm工艺芯片上对VDD和VSS信号的片上测量。结果显示VDD和VSS信号的波动，这可能构成一个重要的新的可靠性问题。这些波动也间接影响其他可靠性机制，如NBTI、HCI和TDDB。模拟预测，这种现象在未来的技术中会加剧，这可能会成为进一步扩大规模的绊脚石。

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Supply signal fluctuations due to chip power grid resonance — a new reliability concern

On-die measurements of VDD and VSS signals inside a 90 nm technology chip are presented. The results show fluctuations in the VDD and VSS signals, which might constitute an important new reliability concern. These fluctuations also indirectly affect other reliability mechanisms, such as NBTI, HCI and TDDB. Simulations predict aggravation of this phenomenon for future technologies, which may prove to be a show stopper for further scaling.

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2008 IEEE International Reliability Physics Symposium

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