Mariem Bouraoui, I. Barraj, Amel Neifar, M. Masmoudi
{"title":"一种用于无线唤醒接收机的变增益超宽带降噪LNA","authors":"Mariem Bouraoui, I. Barraj, Amel Neifar, M. Masmoudi","doi":"10.1109/DTS55284.2022.9809845","DOIUrl":null,"url":null,"abstract":"The design of an ultra-wideband low-noise amplifier for wake-up receiver applications is discussed in this article. The LNA circuit is developed for the 3–9 GHz frequency ranges using RF-TSMC CMOS 0.18µm. To lower the noise figure, substrate resistance is added. The improved LNA achieves a low noise figure of 1.66 dB, which is 47% better than the original circuit, and a maximum power gain of 21.02 dB over the operating frequency range. The designed LNA dissipates 12.3mW at 1V.","PeriodicalId":290904,"journal":{"name":"2022 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An Ultra-Wideband noise-reduction LNA With Variable Gain for Wireless Wake-up Receivers\",\"authors\":\"Mariem Bouraoui, I. Barraj, Amel Neifar, M. Masmoudi\",\"doi\":\"10.1109/DTS55284.2022.9809845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of an ultra-wideband low-noise amplifier for wake-up receiver applications is discussed in this article. The LNA circuit is developed for the 3–9 GHz frequency ranges using RF-TSMC CMOS 0.18µm. To lower the noise figure, substrate resistance is added. The improved LNA achieves a low noise figure of 1.66 dB, which is 47% better than the original circuit, and a maximum power gain of 21.02 dB over the operating frequency range. The designed LNA dissipates 12.3mW at 1V.\",\"PeriodicalId\":290904,\"journal\":{\"name\":\"2022 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTS55284.2022.9809845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTS55284.2022.9809845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ultra-Wideband noise-reduction LNA With Variable Gain for Wireless Wake-up Receivers
The design of an ultra-wideband low-noise amplifier for wake-up receiver applications is discussed in this article. The LNA circuit is developed for the 3–9 GHz frequency ranges using RF-TSMC CMOS 0.18µm. To lower the noise figure, substrate resistance is added. The improved LNA achieves a low noise figure of 1.66 dB, which is 47% better than the original circuit, and a maximum power gain of 21.02 dB over the operating frequency range. The designed LNA dissipates 12.3mW at 1V.