Analytical Modeling of Dielectric Modulated Triple Material Stacked Surrounding Gate Junctionless MOSFET based label free Biosensor

This article explores and investigates the parametric study of a high-performance 2D Analytical modeling of Dielectric Modulated, Triple Material, Stacked Surrounding Gate Junctionless (DMTMSSGJL) MOSFET based label free biosensor. The biosensing performance parameters namely the surface potential, channel center potential and the threshold voltage has been achieved with the solutions obtained from 2D Poisson’s equation when solved with the aid of cylindrical coordinate system. The dielectric modulation technique has been integrated within the nanogap near the source and drain region to measure the shift in threshold voltage sensitivity for the recognition of various neutral biomolecules such as Biotin, APTES, Gluten, Keratin, and Gelatin. The enhancement in the sensitivity of the model may be achieved by optimizing certain device parameters. These includes oxide thickness (tox), nanogap thickness (tgap), channel length (Lg), nano-gap length (Lgap), alteration of drain voltage (VDS), and work function variation of the metal gate.