基于sram的FPGA中的总电离剂量效应

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816052

D.M. MacQueen, D. Gingrich, N.J. Buchanan, P. W. Green

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引用次数: 7

摘要

我们测量了总电离剂量对Xilinx XC4036X fpga的影响。fpga以约0.5 krad/hr的剂量率辐照。在电源电流增加前，xl系列和xla系列fpga的平均总剂量分别为39 krad(Si)和16 krad(Si)。

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Total ionizing dose effects in a SRAM-based FPGA

We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased.

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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