高热流密度微电子介质液体的浸没冷却

M. Arik, A. Bar-Cohen
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引用次数: 22

摘要

本文探讨了直接液体冷却的使用方法,即将组件浸入惰性、无毒、高介电强度的全氟碳液体中。候选液体的沸腾传热提供的传热系数比空气强制对流所能达到的传热系数高两个数量级。不幸的是,高效的核沸腾域终止于所谓的临界热通量,在大气条件和饱和温度下大约在20 W/cm/sup 2/范围内。因此,如果下一代芯片要采用浸没式冷却,就必须找到增加这些介电液体池沸腾CHF的方法。在本实验室开发的池沸腾CHF相关性的使用,指出了达到接近60 W/cm/sup 2/ CHF的可能性,使用高压和过冷,以及高沸点氟碳的稀释混合物,并在芯片表面涂上微孔涂层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Immersion cooling of high heat flux microelectronics with dielectric liquids
This paper explores the use of direct liquid cooling, by immersion of the components in inert, non-toxic, high dielectric strength perfluorocarbon liquids. Boiling heat transfer with the candidate liquids provides heat transfer coefficients that are as much as two orders of magnitude higher than achievable with forced convection of air. Unfortunately, the highly effective nucleate boiling domain terminates at the so-called Critical Heat Flux, approximately in the range of 20 W/cm/sup 2/ at atmospheric conditions and saturation temperature. Consequently, if immersion cooling is to be used for next generation chips, ways must be found to increase the pool boiling CHF of these dielectric liquids. Use of a pool boiling CHF correlation, developed in this laboratory, points to the possibility of reaching a CHF of nearly 60 W/cm/sup 2/, using elevated pressure and subcooling, along with a dilute mixture of a high boiling point fluorocarbon, and applying a microporous coating to the surface of the chip.
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