Abdelali El Amraoui, M. Bocquet, F. Barros, J. Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, V. Fischer, R. Coppard, R. Gwoziecky
{"title":"基于印刷互补有机薄膜晶体管的铁电存储器解码器","authors":"Abdelali El Amraoui, M. Bocquet, F. Barros, J. Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, V. Fischer, R. Coppard, R. Gwoziecky","doi":"10.1109/ESSCIRC.2014.6942034","DOIUrl":null,"url":null,"abstract":"This paper presents a decoder circuit manufactured in a printed complementary organic TFT technology on flexible substrate. Decoder architecture, simulation and experimental results are detailed. In order to comply with current printed electronic capability, a tree based decoding architecture is specifically implemented in order to provide robust functionality with a limited number of transistors. Two different output stages are implemented in order to drive active and passive ferroelectric memory. To drive active matrix, a buffer output stage is proposed, whereas a pass-gate based output stage, with customizable voltage, is used for passive matrix. Characterization results show that the decoder for both output stage options is functional for a wide range of voltage from 40V down to 5V, and for timing between 5ms and 100ms.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Printed complementary organic thin film transistors based decoder for ferroelectric memory\",\"authors\":\"Abdelali El Amraoui, M. Bocquet, F. Barros, J. Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, V. Fischer, R. Coppard, R. Gwoziecky\",\"doi\":\"10.1109/ESSCIRC.2014.6942034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a decoder circuit manufactured in a printed complementary organic TFT technology on flexible substrate. Decoder architecture, simulation and experimental results are detailed. In order to comply with current printed electronic capability, a tree based decoding architecture is specifically implemented in order to provide robust functionality with a limited number of transistors. Two different output stages are implemented in order to drive active and passive ferroelectric memory. To drive active matrix, a buffer output stage is proposed, whereas a pass-gate based output stage, with customizable voltage, is used for passive matrix. Characterization results show that the decoder for both output stage options is functional for a wide range of voltage from 40V down to 5V, and for timing between 5ms and 100ms.\",\"PeriodicalId\":202377,\"journal\":{\"name\":\"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2014.6942034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2014.6942034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Printed complementary organic thin film transistors based decoder for ferroelectric memory
This paper presents a decoder circuit manufactured in a printed complementary organic TFT technology on flexible substrate. Decoder architecture, simulation and experimental results are detailed. In order to comply with current printed electronic capability, a tree based decoding architecture is specifically implemented in order to provide robust functionality with a limited number of transistors. Two different output stages are implemented in order to drive active and passive ferroelectric memory. To drive active matrix, a buffer output stage is proposed, whereas a pass-gate based output stage, with customizable voltage, is used for passive matrix. Characterization results show that the decoder for both output stage options is functional for a wide range of voltage from 40V down to 5V, and for timing between 5ms and 100ms.