使用C-TFT的非对称存储单元用于ULSI ram

1992 Symposium on VLSI Technology Digest of Technical Papers Pub Date : 1992-06-02 DOI:10.1109/VLSIT.1992.200635

H. Kuriyama, T. Okada, M. Ashida, O. Sakamoto, K. Yuzuriha, K. Tsutsumi, T. Nishimura, K. Anami, Y. Kohno, H. Miyoshi

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引用次数: 9

摘要

讨论了一种采用互补薄膜晶体管(c - tft)的紧凑SRAM存储单元结构。C-TFT由顶栅n通道TFT和底栅p通道TFT组成。所提出的单元的大小减少到传统单元在16mb SRAM级别的80%。此外，使用C-TFT可以在低电源电压下实现稳定的读取操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An asymmetric memory cell using a C-TFT for ULSI SRAMs

A compact SRAM memory cell structure using a set of C-TFTs (complementary thin-film transistors) is discussed. A C-TFT is composed of a top-gate N-channel TFT and a bottom-gate P-channel TFT. The proposed cell's size was reduced to 80% of that of a conventional one at the 16-Mb SRAM level. Also, a stable read operation under a low-supply voltage could be realized by using a C-TFT.<>

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来源期刊

1992 Symposium on VLSI Technology Digest of Technical Papers

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