S. Barilo, V. Gatalskaya, G. V. Gatalskii, Sergei L. Kurockin
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引用次数: 1
摘要
引用了Tc = 91K时Yba2Cu3Oy单晶磁化强度的测量结果。在4.2 K ~ 75 K的温度范围内,用VSM方法得到了残余磁化Mr(T, B, T)的温度、场和时间依赖关系。该单晶被快电子辐照,其影响高达2 X 1018 cm-2。在整个温度范围内,Mr(t)的弛豫除起动状态和辐照状态的约30-50 K区间外,在时间间隔t = 1 h内服从对数规律。辐照后,尽管通量蠕变有所降低,但Jc仍有所下降。辐照在高温下效果变差。在传统的通量蠕变理论和辐射缺陷与背景缺陷相互作用模型的框架下对结果进行了讨论。
Irradiation effect on the pinning potential of YBCO single crystal
The results of the magnetization measurements of single crystal of Yba2Cu3Oy with Tc equals 91K are adduced. The temperature, field and time dependencies of the remnant magnetization Mr(T, B, t) were obtained using VSM method for the temperature range from 4.2 K to 75 K for Hc configuration. The single crystal has been irradiated by the fast electrons with fluences up to 2 X 1018 cm-2. The relaxation of Mr(t) obeys to the logarithmic law for the time interval t equals 1 h for whole temperature range except the approximately 30-50 K interval for starting and irradiated states. After irradiation the Jc decease despite the flux creep reduction. The irradiation become less effective at high temperatures. The results are discussed in frame of conventional flux creep theory and of the interaction model of radiation defects with the background ones.