带周期性驱动噪声源的GaAs FET振荡器噪声模型

1986 16th European Microwave Conference Pub Date : 1986-10-01 DOI:10.1109/EUMA.1986.334271

H. Siweris, B. Schiek

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引用次数: 21

摘要

本文描述了砷化镓场效应管振荡器相位噪声的测量和数值模拟。结果表明，用传统的噪声模型进行仿真与实验结果不能很好地吻合。采用扩展振荡器噪声模型，其中包括周期性驱动噪声源，可显著提高精度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A GaAs FET Oscillator Noise Model with a Periodically Driven Noise Source

Measurements and numerical simulations of the phase noise of a GaAs FET oscillator are described. It is shown that simulations with a conventional noise model lead to unsatisfactory agreement with the experimental results. A significantly improved accuracy is obtained with an extended oscillator noise model, which includes a periodically driven noise source.

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1986 16th European Microwave Conference

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