{"title":"未来存储器技术，包括新兴存储器","authors":"K. Kim, G. Koh","doi":"10.1109/ICMEL.2004.1314646","DOIUrl":null,"url":null,"abstract":"There have been concerns about how far we can extend the so far so successful conventional semiconductor memories Such as DRAM, SRAM and Flash memory and what will be the future directions of memory development. In this article, we will review the key technical limits of conventional memory scaling and the directions to overcome the problem. In addition, we will review the technical challenges and opportunities of emerging. new memories such as ferroelectric RAM (FRAM), magnetic RAM (MRAM) and phase change RAM (PRAM) which has been recently focused as candidates for ideal memory which can solve the problems of conventional memories.","PeriodicalId":202761,"journal":{"name":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Future memory technology including emerging new memories\",\"authors\":\"K. Kim, G. Koh\",\"doi\":\"10.1109/ICMEL.2004.1314646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There have been concerns about how far we can extend the so far so successful conventional semiconductor memories Such as DRAM, SRAM and Flash memory and what will be the future directions of memory development. In this article, we will review the key technical limits of conventional memory scaling and the directions to overcome the problem. In addition, we will review the technical challenges and opportunities of emerging. new memories such as ferroelectric RAM (FRAM), magnetic RAM (MRAM) and phase change RAM (PRAM) which has been recently focused as candidates for ideal memory which can solve the problems of conventional memories.\",\"PeriodicalId\":202761,\"journal\":{\"name\":\"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2004.1314646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2004.1314646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Future memory technology including emerging new memories
There have been concerns about how far we can extend the so far so successful conventional semiconductor memories Such as DRAM, SRAM and Flash memory and what will be the future directions of memory development. In this article, we will review the key technical limits of conventional memory scaling and the directions to overcome the problem. In addition, we will review the technical challenges and opportunities of emerging. new memories such as ferroelectric RAM (FRAM), magnetic RAM (MRAM) and phase change RAM (PRAM) which has been recently focused as candidates for ideal memory which can solve the problems of conventional memories.
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