基于二维泊松方程的薄膜SOI resuf结构解析物理模型

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786077

Wenhong Li, Jinsheng Luo

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引用次数: 1

摘要

本文基于二维泊松方程，考虑了SiO/sub - 2/界面电荷的影响，建立了一种新型的薄膜SOI RESURF结构解析物理模型。利用该模型分析了SOI薄膜材料的结构。在p/sup +/n和n/sup +/n结点的界面处存在两个电场峰值。电位分布类似于p/sup +/n和n/sup +/n连接之间的步骤。SiO/sub 2/界面电荷使p/sup +/n界面处的电场增大，使n/sup +/n界面处的电场减小。分析结果与美第奇的模拟结果一致。

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A novel analytical physical model for thin film SOI RESURF structure based on 2-D Poisson equation

In this paper, a novel analytical physical model for a thin film SOI RESURF structure is developed, based on the 2D Poisson equation, and the influence of the field SiO/sub 2/ interface charge is considered. The thin film SOI RESURF structure is analyzed using this novel model. There are two electric field peak values at the interfaces of the p/sup +/n and n/sup +/n junctions. The potential distribution is similar to a step between the p/sup +/n and n/sup +/n junctions. The field SiO/sub 2/ interface charge makes the electric field increase at the interface of the p/sup +/n junction, and reduces the electric field at the interface of the n/sup +/n junction. The analytical results agree with the simulations of MEDICI.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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