Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region

In this paper, we propose a two-dimensional analytical model of single material symmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor (DGS-JLFET) for subthreshold region. This model has been investigated and expected to improve subthreshold characteristics and minimize short channel effects. The characteristics of DGS-JLFET are compared with those of the single material symmetric Double Gate Junctionless Field Effect Transistor (DG-JLFET). Our proposed DGS-JLFET exhibits higher Ion/Ioff ratio, less subthreshold swing (SS) and less drain induced barrier lowering (DIBL) when compared to DG-JLFET.