{"title":"用CD-SEM评价Cu/低k互连模式的线边缘粗糙度","authors":"A. Yamaguchi, D. Ryuzaki, K. Takeda, H. Kawada","doi":"10.1109/IITC.2009.5090394","DOIUrl":null,"url":null,"abstract":"To establish the method for evaluating interconnect LER, resist, low-k, and Cu/low-k samples were observed and electric-field enhancement was simulated. Wedge-shape LER was observed in the edges of low-k and Cu/low-k patterns, and simulations showed that the wedge causes serious electric-field enhancement which can degrade TDDB property. To predict the risk of TDDB, inspections of the wedge angle after low-k etching and Cu CMP are required as well as that of the degree of LER.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"31 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Evaluation of line-edge roughness in Cu/low-k interconnect patterns with CD-SEM\",\"authors\":\"A. Yamaguchi, D. Ryuzaki, K. Takeda, H. Kawada\",\"doi\":\"10.1109/IITC.2009.5090394\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To establish the method for evaluating interconnect LER, resist, low-k, and Cu/low-k samples were observed and electric-field enhancement was simulated. Wedge-shape LER was observed in the edges of low-k and Cu/low-k patterns, and simulations showed that the wedge causes serious electric-field enhancement which can degrade TDDB property. To predict the risk of TDDB, inspections of the wedge angle after low-k etching and Cu CMP are required as well as that of the degree of LER.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"31 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090394\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of line-edge roughness in Cu/low-k interconnect patterns with CD-SEM
To establish the method for evaluating interconnect LER, resist, low-k, and Cu/low-k samples were observed and electric-field enhancement was simulated. Wedge-shape LER was observed in the edges of low-k and Cu/low-k patterns, and simulations showed that the wedge causes serious electric-field enhancement which can degrade TDDB property. To predict the risk of TDDB, inspections of the wedge angle after low-k etching and Cu CMP are required as well as that of the degree of LER.
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