单、双栅极mosfet低频噪声的量子力学建模

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553063

S. Rai, S. S. Islam

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摘要

本文报道了一种用量子力学方法计算单、双栅极mosfet低频噪声的模型。本文给出了单栅极和双栅极场效应管的截面图

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Modeling of low-frequency noise in single- and double-gate MOSFETs using quantum mechanical approach

This paper reports a model to calculate low frequency noise in single- and double-gate MOSFETs using a quantum mechanical approach. The cross-sections of the single- and double-gate FETs are shown in the paper

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来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

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