JFET输入运算放大器中总剂量引起的输入偏置电压增加

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858649

R. Pease, J. Krieg, M. Gehlhausen, D. Platteter, J. Black

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引用次数: 10

摘要

在不同的测试条件下，对四种不同类型的商用JFET输入运算放大器进行了电离辐射照射。在最坏情况下，所有的输入偏置电压(V/sub / os/)都显著增加。微探针测量了未辐照和辐照电路中去耦合输入的jfet的电特性，结果表明，V/sub / os/的增加是由于退化的jfet的针脚电压不匹配造成的。

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Total dose induced increase in input offset voltage in JFET input operational amplifiers

Four different types of commercial JFET input operational amplifiers were irradiated with ionizing radiation under a variety of test conditions. All experienced significant increases in input offset voltage (V/sub os/) for the worst-case irradiation bias. Microprobe measurement of the electrical characteristics of the de-coupled input JFETs on both non-irradiated and irradiated circuits demonstrates that the increase in V/sub os/ is a result of the mismatch of the pinchoff voltage of the degraded JFETs.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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