用于分析纳米结构电子特性的多功能有限体积模拟器

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035089

Z. Stanojević, M. Karner, K. Schnass, C. Kernstock, O. Baumgartner, H. Kosina

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引用次数: 6

摘要

我们提出了一种新的语义方法来建模和仿真纳米电子器件。该方法基于有限体积空间离散化方案。该方案适用于材料各向异性的精确处理。因此，它能够捕捉取向和应变效应，这两者在纳米尺度下都是突出的。我们还通过使用六波段k·p哈密顿空穴作为模型的量子点三维模拟研究证明了该方法的简单性和强大性。

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A versatile finite volume simulator for the analysis of electronic properties of nanostructures

We present a novel semantic approach to modeling and simulation of nanoelectronic devices. The approach is based on a finite volume spatial discretization scheme. The scheme was adapted to accurately treat material anisotropy. It is thus capable of capturing orientation and strain effects both of which are prominent in the nanoscale regime. We also demonstrate the method's simplicity and power with a three-dimensional simulation study of a quantum dot using a six band k · p Hamiltonian for holes as model.

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来源期刊

2011 International Conference on Simulation of Semiconductor Processes and Devices

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