M. Yousif, M. Johansson, P. Lundgren, S. Bengtsson, J. Sundqvist, A. Hårsta, H. Radamson
{"title":"应变si和应变sige mosfet的HfO/sub 2/","authors":"M. Yousif, M. Johansson, P. Lundgren, S. Bengtsson, J. Sundqvist, A. Hårsta, H. Radamson","doi":"10.1109/ESSDERC.2003.1256862","DOIUrl":null,"url":null,"abstract":"We report on HfO/sub 2/ gate dielectrics grown by atomic layer deposition (ALD) at 600/spl deg/C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO/sub 2/ deposition and an interface state density of /spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/ was obtained for the case of thick HfO/sub 2/ films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO/sub 2/ films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO/sub 2/ film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si/sub 0.77/Ge/sub 0.23//Si. The carrier transport through these HfO/sub 2/ films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs\",\"authors\":\"M. Yousif, M. Johansson, P. Lundgren, S. Bengtsson, J. Sundqvist, A. Hårsta, H. Radamson\",\"doi\":\"10.1109/ESSDERC.2003.1256862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on HfO/sub 2/ gate dielectrics grown by atomic layer deposition (ALD) at 600/spl deg/C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO/sub 2/ deposition and an interface state density of /spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/ was obtained for the case of thick HfO/sub 2/ films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO/sub 2/ films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO/sub 2/ film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si/sub 0.77/Ge/sub 0.23//Si. The carrier transport through these HfO/sub 2/ films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs
We report on HfO/sub 2/ gate dielectrics grown by atomic layer deposition (ALD) at 600/spl deg/C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO/sub 2/ deposition and an interface state density of /spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/ was obtained for the case of thick HfO/sub 2/ films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO/sub 2/ films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO/sub 2/ film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si/sub 0.77/Ge/sub 0.23//Si. The carrier transport through these HfO/sub 2/ films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage.
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