A Three-valued Adder Circuit Implemented in ZnO Memristor with Multi-resistance States

The memristors are widely used in-memory computation due to their advantages such as high integration density, fast read/write speed, non-volatile storage and low power consumption. By adjusting the conversion between the multi-resistance states of the memristor, the ternary logic with larger information processing capacity can be realized with simple operation and circuit design. In this paper, we fabricated a Pt/ZnO/Pt memristor, which shows the characteristics of multi-resistance states conversion in multiple cycle operations, further realized the complete set of ternary logic based on the ZnO-based memristor, and designed a three-valued adder unit circuit with potential application value of full memristor. The result shows that the function of a three-valued adder can be realized by using five memristors. Compared with the traditional CMOS circuit, the three-valued adder unit circuit based on memristor reduces the number of components by one third. This approach is helpful for building future high-performance computer architectures.