工艺变化对CMOS数据转换器ΔIDDQ测试的影响

R. Soundararajan, A. Srivastava, S. Yellampalli
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引用次数: 1

摘要

我们提出了一种内置电流传感器(BICS)的实现,该传感器考虑了无缺陷电路的背景电流增加以及工艺变化对CMOS数据转换器IDDQ测试的影响。设计了一个12位数模转换器(DAC)作为被测电路(CUT)。BICS在CUT中使用频率作为故障检测的输出。当输出频率与基准频率偏差大于±10%时,判定为故障。模拟了不同(MOSIS)模型参数下BICS的输出频率,以检验工艺变化对频率偏差的影响。利用故障注入晶体管注入了一组模拟CMOS数据转换器制造缺陷的8个故障,并成功地进行了测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process variation effects on ΔIDDQ testing of CMOS data converters
We present, implementation of a built-in current sensor (BICS) which takes into account the increased background current of defect-free circuits and the effects of process variation on ?IDDQ testing of CMOS data converters. A 12-bit digital-to-analog converter (DAC) is designed as the circuit under test (CUT). The BICS uses frequency as the output for fault detection in CUT. A fault is detected if it causes the output frequency to deviate more than ±10% from the reference frequency. The output frequencies of the BICS for various (MOSIS) model parameters are simulated to check for the effect of process variation on the frequency deviation. A set of eight faults simulating manufacturing defects in CMOS data converters are injected using fault-injection transistors and tested successfully.
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