深入了解由流程相关问题引起的系统二次EOS损坏

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915725

Saidaliah Sarip, John Carlo Francisco, Tejinder Gandhi, Che-Ping Chen, Jed Paolo Deligente, Jonathan Azares

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引用次数: 0

摘要

电气过应力(EOS)是半导体工业中一个众所周知的问题。通常，EOS损害发生在一个系统的方式在一个特定的位置的骰子。本文将多通道数据采集设备返回进行分析，以解决重复的EOS故障症状。我们提出了两(2)个客户退回设备的案例研究，显示异常钝化层导致金属2的二次EOS损坏。这导致了对EOS现象的深入分析，我们追溯到晶圆级，确定了工艺和电气根本原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Deep Dive into Systemic Secondary EOS Damage caused by a Process-Related Issue

Electrical Overstress (EOS) is a widely known problem in the semiconductor industry. Oftentimes, EOS damage occurs on a systemic manner at a certain location of the die. In this paper, multi-channel data-acquisition devices were returned for analysis to solve repetitive EOS symptoms of failure. We present two (2) case studies of the customer-returned devices that show anomalous passivation layer resulting in secondary EOS damages at Metal 2. This leads to an in-depth analysis of the EOS phenomena that we traced back at the wafer-level where process and electrical root cause were determined.

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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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